Ha e kopantsoe le melemo e felletseng ea ts'ebetso ea thepa ea setso ea Al2O3 le BeO substrate, ceramic ea Aluminium Nitride (AlN), e nang le conductivity e phahameng ea mocheso (conductivity ea monocrystal ea mocheso ke 275W/m▪k, conductivity ea polycrystal ea mocheso ke 70~210W/m▪k), constant e tlase ea dielectric, coefficient ea katoloso ea mocheso e tsamaellanang le silicon e le 'ngoe ea kristale, le thepa e ntle ea ho thibela motlakase, ke thepa e loketseng bakeng sa li-substrate tsa potoloho le liphutheloana indastering ea microelectronics. Hape ke thepa ea bohlokoa bakeng sa likarolo tsa ceramic tsa sebopeho sa mocheso o phahameng ka lebaka la thepa e ntle ea mechini ea mocheso o phahameng, thepa ea mocheso le botsitso ba lik'hemik'hale.
Botenya ba khopolo-taba ea AlN ke 3.26g/cm3, boima ba MOHS ke 7-8, ho hanyetsa mocheso oa kamore ho feta 1016Ωm, 'me ho ata ha mocheso ke 3.5×10-6/℃ (mocheso oa kamore oa 200℃). Liserami tse hloekileng tsa AlN ha li na 'mala ebile li bonaletsa, empa li ka ba mebala e fapaneng joalo ka bohlooho, bosoeu bo bosoeu kapa bosehla bo bobebe, ka lebaka la litšila.
Ntle le ho khanna mocheso o phahameng, li-ceramic tsa AlN le tsona li na le melemo e latelang:
1. Ho thibela motlakase hantle;
2. Koefficient e tšoanang ea katoloso ea mocheso e nang le monocrystal ea silicon, e phahametseng thepa e kang Al2O3 le BeO;
3. Matla a phahameng a mechini le matla a tšoanang a ho kokobela a nang le liserami tsa Al2O3;
4. Tahlehelo e itekanetseng ea dielectric e sa fetoheng le ea dielectric;
5. Ha ho bapisoa le BeO, ho khanna ha mocheso oa liserame tsa AlN ha ho amehe haholo ke mocheso, haholo-holo ka holimo ho 200℃;
6. Ho hanyetsa mocheso o phahameng le ho hanyetsa ho bola;
7. Ha e na chefo;
8. E ka sebelisoa indastering ea semiconductor, indastering ea tšepe ea lik'hemik'hale le masimong a mang a indasteri.
Nako ea poso: Phupu-14-2023